NTE4153NT1G
Manufacturer:
On Semiconductor
Mfr.Part #:
NTE4153NT1G
Datasheet:
Description:
MOSFETs SC-75-3 SMD/SMT N-Channel number of channels:1 300 mW 20 V Continuous Drain Current (ID):915 mA 1.82 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 20 V |
| Length | 1.7 mm |
| Width | 950 µm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 230 MΩ |
| Height | 800 µm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 915 mA |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 300 mW |
| Power Dissipation | 300 mW |
| Threshold Voltage | 760 mV |
| Number of Channels | 1 |
| Input capacitance | 110 pF |
| Continuous Drain Current (ID) | 915 mA |
| Rds On Max | 230 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 3.7 ns |
| Turn-Off Delay Time | 25 ns |
| Element Configuration | Single |
| Rise Time | 4.4 ns |
| Gate Charge | 1.82 nC |
| Drain to Source Resistance | 500 mΩ |
| Nominal Vgs | 760 mV |
| Gate to Source Voltage (Vgs) | 6 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Schedule B | 8541210080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 450 mV |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 1801
Distributors
pcbx
pcbxUnit Price$0.09283
Ext.Price$0.09283
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.09283 | $0.09283 |
| 10 | $0.08370 | $0.83700 |
| 50 | $0.07546 | $3.77300 |
| 100 | $0.06414 | $6.41400 |
| 500 | $0.05451 | $27.25500 |
| 1000 | $0.05209 | $52.09000 |
| 3000 | $0.04978 | $149.34000 |
| 5000 | $0.04714 | $235.70000 |